Study of Schottky Barrier Heights of Indium-Tin-Oxide on p-GaN Using X-ray Photoelectron Spectroscopy and Current-Voltage Measurements
Abstract
[[abstract]]diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements- Gallium nitride (GaN);Indium-tin-oxide (ITO);Schottky barrier height;Thermionic field emission (TFE);X-ray photoelectron spectroscopy (XPS)
- [[classification]]46
- Gallium nitride (GaN);Indium-tin-oxide (ITO);Schottky barrier height;Thermionic field emission (TFE);X-ray photoelectron spectroscopy (XPS)
- [[classification]]46
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Last time updated on 05/10/2013
This paper was published in National Changhua University of Education Institutional Repository.
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