Article thumbnail
Location of Repository

Phase selection in the rare earth silicides

By C. Eames, M. Reakes, S. Tear, T. Noakes and Paul Bailey

Abstract

The rare earth silicides form islands with a tetragonal or a hexagonal structure that coexist when grown on the Si(100) surface. We show using medium energy ion scattering that it is possible to selectively grow one of these as a pure phase by controlling the mobility of the rare earth atoms as they are deposited. When dysprosium, holmium, and erbium are deposited onto a liquid nitrogen cooled substrate the hexagonal structural phase is formed after annealing. When erbium and holmium are deposited onto a hot substrate only the tetragonal phase results. For dysprosium silicide growth under conditions of high mobility causes approximately equal numbers of hexagonal and tetragonal islands to form. The system offers a means to obtain fine control over physical properties such as the Schottky barrier height

Topics: QC
Publisher: American Physical Society
Year: 2010
DOI identifier: 10.1103/physrevb.82.174112
OAI identifier: oai:eprints.hud.ac.uk:12486
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://dx.doi.org/10.1103/Phys... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.