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Statistical variability and reliability and the impact on corresponding 6T-SRAM cell design for a 14-nm node SOI FinFET technology

By Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Jente B. Kuang, Sani Nassif and Asen Asenov

Abstract

This paper presents an evaluation of 14-nm SOI FinFET CMOS SRAM codesign techniques in the presence of statistical variability and reliability impact. As statistical variability sources random discrete dopants, gate-edge roughness, fi-edge roughness, metal-gate granularity and random interface trapped charges in N/PBTI are considered

Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'
Year: 2013
DOI identifier: 10.1109/MDAT.2013.2266395
OAI identifier: oai:eprints.gla.ac.uk:92208
Provided by: Enlighten
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