Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications

Abstract

The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface

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34512oai:eprints.iisc.ac.in:34512
Last time updated on October 2, 2018

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