10.1088/0957-4484/21/9/095704

High-k Hf-based layers grown by RF magnetron sputtering

Abstract

International audienceStructural and chemical properties of Hf-based layers fabricated by RF magnetron sputtering were studied by means of x-ray diffraction, transmission electron microscopy and attenuated total reflection infrared spectroscopy versus the deposition parameters and annealing treatment. The deposition and post-deposition conditions allow us to control the temperature of the amorphous–crystalline phase transition of HfO 2-based layers. It was found that silicon incorporation in an HfO 2 matrix plays the main role in the structural stability of the layers. It allows us not only to decrease the thickness of the film/substrate interfacial layer to 1 nm, but also to conserve the amorphous structure of the layers after an annealing treatment up to 900–1000°

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This paper was published in HAL-CEA.

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