Monte Carlo modeling of nanometer scale MOSFETs

Sangiorgi, E; Palestri, Pierpaolo; Esseni, David; Fiegna, C; Selmi, Luca

doi:10.1109/IWPSD.2007.4472456

Monte Carlo modeling of nanometer scale MOSFETs

By E Sangiorgi, Pierpaolo Palestri, David Esseni, C Fiegna and Luca Selmi

Abstract

Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials

Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'

Year: 2007

DOI identifier: 10.1109/IWPSD.2007.4472456

OAI identifier: oai:iris.unimore.it:11380/1163486

Provided by: Archivio istituzionale della ricerca - Università di Modena e Reggio Emilia

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Monte Carlo modeling of nanometer scale MOSFETs

Abstract

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