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Spectroscopic study of Si-based semiconductor heterostructures grown by molecular beam epitaxy

By Noritaka Usami

Abstract

報告番号: 乙13671 ; 学位授与年月日: 1998-01-29 ; 学位の種別: 論文博士 ; 学位の種類: 博士(工学) ; 学位記番号: 第13671号 ; 研究科・専攻: 工学系研究科物理工学専

Year: 1998
OAI identifier: oai:repository.dl.itc.u-tokyo.ac.jp:2261/54043
Provided by: UT Repository
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