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Représentation d'état pour un MOSFET SiC

By Nk M'Sirdi, K Frifita, E Baghaz, A Naamane and M Boussak

Abstract

International audienceThis paper proposes a State Space Model for a power a Silicon Carbide (SiC) MOSFET. The model uses the electrical EKV MOSFET structure. The model is developed for the SiC MOSFET CMD CREE (V, A) and uses the parameters extracted from datashee

Topics: Power Control, MOSFET SiC, State Space Model, [SPI]Engineering Sciences [physics]
Publisher: HAL CCSD
Year: 2018
OAI identifier: oai:HAL:hal-01779823v1

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