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Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

By Jaehyun Lee, Jie Liang, Salvatore Amoroso, Toufik Sadi, Liping Wang, Asen Asenov, Andrew Pender, Dave Reid, Vihar Georgiev, Campbell Millar and Aida Todri-Sanial

Abstract

International audienceIn this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)- based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay

Topics: Interconnects, Hierarchical models, Density Functional Theory (DFT), Circuit simulation, Carbon nanotubes (CNTs), Cu-CNT composites, [SPI]Engineering Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'
Year: 2017
DOI identifier: 10.23919/SISPAD.2017.8085287
OAI identifier: oai:HAL:lirmm-01795803v1
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