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Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

By XH Luo, RM Wang, XP Zhang, HZ Zhang, DP Yu and MC Luo

Abstract

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.MicroscopySCI(E)CPCI-S(ISTP)PubMed

Topics: transmission electron microscopy, electron energy loss spectroscopy, molecular beam epitaxy, gallium nitride, CHEMICAL-VAPOR-DEPOSITION, EPITAXY, LAYER
Year: 2004
DOI identifier: 10.1016/j.micron.2004.01.010
OAI identifier: oai:localhost:20.500.11897/199591
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