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锰铋加轻稀土元素的磁光薄膜介质

By 方瑞宜, 李东镭, 刘明升, 杨丹坤 and 戴道生

Abstract

本发明是在MnBi中掺入轻稀土元素R(R=La,Ce,Pr,Nd,Sm,Gd),蒸镀时投料的配方适当,改善了介质的热稳定性,大大增高了磁光Kerr转角θK(θK=1.8—2.6°),并提高了介质的磁光优值θKR反的值。本发明在蒸镀时采用液氮冷却基片的方法,使生成的晶粒细化,降低了晶界噪声。在退火工艺中采用“步进式”退火方法,提高了样品性能的均匀性。该发明是用作磁光存储技术中磁光盘片的介质和用于磁光技术中的各种磁光器件的金属薄膜介质。

Year: 1990
OAI identifier: oai:localhost:20.500.11897/196570
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