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毫米波低噪声HEMT的短栅制作工艺

By 林绪伦

Abstract

本文介绍两种制作毫米波低噪声HEMT 短栅(0.1~0.25μm)的工艺:(1)采用电子束曝光三层抗蚀剂制作T 形栅;(2)采用常规光刻、结合倾斜蒸发、反应离子刻蚀等工艺制作Γ形栅。中国科学引文数据库(CSCD)00741-4

Topics: 毫米波, 低噪声, 短栅, HEMT
Publisher: 微电子学与计算机
Year: 1990
OAI identifier: oai:localhost:20.500.11897/23494
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