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DESIGN AND FABRICATION OF THE SUSPENDED HIGH-Q SPIRAL INDUCTORS WITH X-BEAMS

By M.C. Hsieh, D.K. Jair, Y.K. Fang and C.S. Lin

Abstract

In this paper, deep sub-micron CMOS process compatible high Q on chip spiral inductors with air gap structure were designed and fabricated. In the design the electromagnetic were used for electrical-characteristics and maximum mechanical strength, respectively. The copper wires were capped with electroless Ni plating to prevent the copper from oxidizing. A Si3N4/ SiO2 X-beam was designed to increase the mechanical strength of the inductor in air gap. The enhancement of maximum mechanical strength of a spiral inductor with X-beams is more than 4500 times. Among these structures, the measured maximum quality factor (Q) of the suspending inductor and frequency at maximum Q are improved from 5.2 and 1.6GHz of conventional spiral inductor to 7.3 and 2.1 GHz, respectively

Publisher: EDA Publishing Association, Grenoble, France
Year: 2007
OAI identifier: oai:documents.irevues.inist.fr:2042/14594
Provided by: I-Revues

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