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NANOINDENTATION-INDUCED PHASE TRANSFORMATION IN SILICON

By Rao R., Bradby J.-E. and Williams J.-S.

Abstract

nanoindentation, phase transformation, siliconNanoindentation-induced phase transformation in silicon has been studied. A series of nanoindentations were made with the sharp diamond Berkovich tip. During nanoindentations, maximum load ranged from 2000 µN to 5000 µN, with a 1000 µN/sec loading rate. Slow unloading rate at 100µN/sec was chosen to favor the formation of the crystalline end phases, high pressure phase (Si-III and Si-XII). Fast unloading rate at 1000µN/sec was used to obtain amorphous phase. The phase transformation was examined by Raman spectroscopy and plan-view transmission electron microscopy (TEM). HPP have been identified even if no “pop-in” and “pop-out” observed in load-depth characteristics curves. HPP appeared in c-Si when the maximum load up to 3000 µN. TEM images have been revealed that the optimization HPP transformation in c-Si at the nanoscale occurred when the maximum load applied at 5000 µN

Topics: nanoindentation, phase transformation, silicon
Publisher: TIMA Editions , Grenoble, France
Year: 2006
OAI identifier: oai:documents.irevues.inist.fr:2042/6795
Provided by: I-Revues

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