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Data retention extraction methodology for perpendicular STT-MRAM

By L. Tillie, E. Nowak, R. Sousa, M.-C. Cyrille, B. Delaet, T. Magis, A. Persico, J. Langer, B. Ocker, I-L Prejbeanu and L. Perniola

Abstract

International audienceWhile perpendicular STT-MRAM are seen as a promising next-generation memory, retention becomes critical and must be characterized precisely. Four extraction methods are explained taking special emphasize on accuracy and precision. They are then applied from single cell to kb-array, from 50 to 250 nm diameter cells and up to 235°C in order to show the limitations and advantages of each method

Topics: Switches, Temperature measurement, Temperature distribution, Stability criteria, Current density, Thermal stability, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'
Year: 2016
DOI identifier: 10.1109/IEDM.2016.7838492
OAI identifier: oai:HAL:hal-01718116v1
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