Location of Repository

Monte Carlo simulations of high-speed InSb-InAlSb FETs.

By D.C. Herbert, P.A. Childs, R.A. Abram, G.C. Crow and M. Walmsley


Self consistent Monte Carlo simulations which include impact ionization are used to study the high-speed potential of InSb field-effect transistors. It is found that the impact ionization has a strong influence on the performance of InSb for high speed. The ionization leads to a high electron drift velocity and substrate bias can be used to extract the holes which are generated in the channel. Residual hole density within the channel, however, limits the maximum speed. The substrate bias and buffer doping are critical for extracting holes from the channel without inducing excess ionization. Simulations yield a peak cutoff frequency of 820 GHz with a 0.03125-μm gate, a source to drain voltage of 0.58, and a sheet doping density of 1.7×1012 cm-2.\ud \u

Topics: High-speed response, InSb, MODFET, Monte Carlo simulation, Impact ionization, Low power.
Publisher: IEEE
Year: 2005
DOI identifier: 10.1109/TED.2005.848115
OAI identifier: oai:dro.dur.ac.uk.OAI2:7651

Suggested articles



  1. (1991). Ambient temperature diodes and field-effect transistors in
  2. C.-F. doi
  3. D. C. Herbert, Private communication/unpublished work at QinetiQ.
  4. Devices, 2nd ed. New York: Wiley, 1981,
  5. K. Shinohara, Y. Yamashita, A. Endoh, I.
  6. P.
  7. Ultra high speed, very low power InSb-based quantum well FETs for logic applications,”
  8. (1995). Uncooled high-speed InSb field-effect transistors,”

To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.