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MILD SYNTHESIS ROUTE TO NANOSTRUCTURED alpha-MnO2 AS ELECTRODE MATERIALS FOR ELECTROCHEMICAL ENERGY STORAGE

By Zhang YJ and Xue DF

Abstract

alpha-MnO2 electrode materials with sphere-, rod- and flower-like nanostructures were for the first time fabricated by a redox reaction between KMnO4 and NaHSO3 in chemical bath. Crystal structure and morphology of the as-crystallized samples were characterized by X-ray diffraction and scanning electron microscopy. The influence of reaction temperature and H+ concentration on both morphology and crystalline nature was investigated. Their electrochemical behaviors were investigated by cycling voltammetry and galvanostatic charge/discharge measurements in a three-electrode glass cell. Depending upon different synthesis conditions of alpha-MnO2 electrodes, their specific capacitance values varied in the range of 43 to 197 F g(-1) at the current density of 1 A g(-1). Moreover, their specific capacitance values decrease with increasing crystallinity and particle size. In this work, we conclude that the energy storage mechanism is closely related to the particle aggregation state of electrode materials

Topics: LI-ION BATTERIES, HIGH-PERFORMANCE, MNO2, CAPACITORS, SEMICONDUCTORS, ANODE, Capacitors, Semiconductors, anode, Condensers (Electricity), Electric capacitors, Electric condensers, capacitor testing, condensers (electric), electron device testing, MIS capacitors, metal-insulator-semiconductor capacitors, MOS capacitors, metal-oxide-semiconductor capacitors, MOS-controlled thyristors, metal-oxide-semiconductor-controlled thyristors, superconducting device testing, thick film capacitors, thick film devices, thick film sensors, thin film capacitors, CONDENSATEURS, CONDENSERS (CAPACITORS), ELECTROLYTIC CAPACITORS, KONDENSATOREN, Semiconducting materials, Semi-conductors, Crystalline semiconductors, Semiconductor devices, semiconductor alloys, space-charge limited devices, HALBLEITER, SEMI-CONDUCTEURS, 阳极
Year: 2012
OAI identifier: oai:ir.ciac.jl.cn:322003/47972
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