The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures

Abstract

The position of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures is studied by transmission electron microscopy. The observation that, for h>h(c) some misfit dislocations glide away from the strained interface towards the substrate is explained by an analysis based on the elasticity theory of interacting dislocations

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University of Queensland eSpace

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Last time updated on 30/08/2013

This paper was published in University of Queensland eSpace.

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