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The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films

By I.M. Anteney, G.J. Parker, P. Ashburn and H.A. Kemhadjian

Abstract

A comparison is made of the electrical effects of carbon in n and p type in situ doped polycrystalline Si1-yCy and Si0.82-ySi0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported

Year: 2001
DOI identifier: 10.1063/1.1343896
OAI identifier: oai:eprints.soton.ac.uk:256473
Provided by: e-Prints Soton
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