A Charge Model for SOI LDMOST with Lateral Doping Gradient

Abstract

In this paper we present a compact physically based charge model, which describes accurately the unique features of the SOI LDMOS. The model uses a modified Ward and Dutton partitioning scheme to account for the lateral doping gradient in the channel region and the overlap of the front gate over the drift region. The model has been implemented in SPICE3f5 and capacitance measurements are shown to agree well with the simulations

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    Southampton (e-Prints Soton)

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    Last time updated on 05/04/2012

    This paper was published in Southampton (e-Prints Soton).

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