With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 μm in length and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10<sup>2</sup> to 10<sup>–3</sup> Ω·cm, and a carrier concentration from 10<sup>17</sup> to 10<sup>20</sup> cm<sup>–3</sup>. Field effect transistor (FET) measurements combined with finite element simulation by NextNano<sup>3</sup> software have put in evidence the high mobility of carriers in the nonintentionally doped (NID) NWs

Similar works

Full text

oai:figshare.com:article/2122366Last time updated on 2/12/2018

This paper was published in FigShare.

Having an issue?

Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.