Enhanced Photoresponse of SnSe-Nanocrystals-Decorated WS<sub>2</sub> Monolayer Phototransistor


Single-layer WS<sub>2</sub> has shown excellent photoresponse properties, but its promising applications in high-sensitivity photodetection suffer from the atomic-thickness-limited adsorption and band-gap-limited spectral selectivity. Here we have carried out investigations on WS<sub>2</sub> monolayer based phototransistors with and without decoration of SnSe nanocrystals (NCs) for comparison. Compared to the solely WS<sub>2</sub> monolayer, SnSe NCs decoration leads to not only huge enhancement of photoresponse in visible spectrum but also extension to near-infrared. Under excitation of visible light in a vacuum, the responsivity at zero gate bias can be enhanced by more than 45 times to ∼99 mA/W, and the response time is retained in millisecond level. Particularly, with extension of photoresponse to near-infrared (1064 nm), a responsivity of 6.6 mA/W can be still achieved. The excellent photoresponse from visible to near-infrared is considered to benefit from synergism of p-type SnSe NCs and n-type WS<sub>2</sub> monolayer, or in other words, the formed p-n heterojunctions between p-type SnSe NCs and n-type WS<sub>2</sub> monolayer

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Last time updated on 12/02/2018

This paper was published in FigShare.

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