Dense and nonporous
amorphous aluminum oxide (AmAO) film was deposited onto platinized
silicon substrate by sol–gel and spin coating technology. The
evaporated aluminum film was deposited onto the AmAO film as top electrode.
The hydrated AmAO film was utilized as a solid electrolyte for anodic
oxidation of the aluminum electrode (Al) film under high electric
field. The hydrated AmAO film was a high efficiency electrolyte, where
a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated
AmAO film. The current–voltage (<i>I</i>–<i>V</i>) characteristics and breakdown phenomena of a dry and
hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad
were studied in this work. Breakdown voltage of the dry and hydrated
210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m<sup>–1</sup>) and 160 ± 5 V (762 ± 24 MV m<sup>–1</sup>), respectively. The breakdown voltage of the hydrated AmAO film
increased about twice, owing to the self-healing behavior (anodic
oxidation reaction). As an intuitive phenomenon of the self-healing
behavior, priority anodic oxidation phenomena was observed in a 210
nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The
results suggested that self-healing behavior (anodic oxidation reaction)
was occurring nearby the defect regions of the films during <i>I</i>–<i>V</i> test. It was an effective electrical
self-healing method, which would be able to extend to many other simple
and complex oxide dielectrics and various composite structures
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