Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor


Flexible and foldable thin-film transistors (TFTs) have been widely studied with the objective of achieving high-performance and low-cost flexible TFTs for next-generation displays. In this study, we introduced the fabrication of foldable TFT devices with excellent mechanical stability, high transparency, and high performance by a fully solution process including PI, YO<sub><i>x</i></sub>, In<sub>2</sub>O<sub>3</sub>, SWCNTs, IL-PVP, and Ag NWs. The fabricated fully solution-processed TFTs showed a higher transmittance above 86% in the visible range. Additionally, the charge-carrier mobility and <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of them were 7.12 ± 0.43 cm<sup>2</sup>/V·s and 5.53 ± 0.82 × 10<sup>5</sup> at a 3 V low voltage operating, respectively. In particular, the fully solution-processed TFTs showed good electrical characteristics under tensile strain with 1 mm bending and even extreme folding up to a strain of 26.79%. Due to the good compatibility of each component layer, it maintained the charge-carrier mobility over 79% of initial devices after 5,000 cycles of folding test in both the parallel and perpendicular direction with a bending radius of 1 mm. These results show the potential of the fully solution-processed TFTs as flexible TFTs for a next generation devices because of the robust mechanical flexibility, transparency, and high electrical performance of it

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oai:figshare.com:article/3364558Last time updated on 2/12/2018

This paper was published in FigShare.

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