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Multimodal Photodiode and Phototransistor Device Based on Two-Dimensional Materials

By Seon Namgung (1274748), Jonah Shaver (814727), Sang-Hyun Oh (1246875) and Steven J. Koester (1473982)

Abstract

With strong light–matter interaction in their atomically thin layered structures, two-dimensional (2D) materials have been widely investigated for optoelectronic applications such as photodetectors and photovoltaic devices. Depending on the aim of optoelectronic applications, different device structures have been employed. Lateral phototransistor structures have been employed for high optical gain, while vertical photodiode structures have been employed for fast response and low power operation. Herein, we demonstrate a multimodal photodetector platform based on 2D materials, combining both a phototransistor and a photodiode and taking the corresponding desirable characteristics from each structure within a single device. In this platform, a multilayered transition-metal dichalcogenide flake is transferred on top of metal electrodes, and a transparent gate electrode is employed. The channel region of the flake between electrodes operates as a phototransistor providing a high gain mode, while the electrode region in the same flake operates as a vertical Schottky photodiode providing a fast response mode. These modes can be dynamically selected by controlling the drain voltage and gate voltage

Topics: Biophysics, Biotechnology, Science Policy, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Information Systems not elsewhere classified, voltage, optoelectronic applications, electrode, photodiode, response, transition-metal dichalcogenide flake, multimodal photodetector platform, device, region, Lateral phototransistor structures, 2 D materials, mode, gain
Year: 2016
DOI identifier: 10.1021/acsnano.6b06468.s001
OAI identifier: oai:figshare.com:article/4217139
Provided by: FigShare
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