Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer


We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×10 13 W cm -2) and sample moving velocity (1 mm s -1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.Department of Applied Physic

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oaioai:ira.lib.polyu.edu.hk:10397/24226Last time updated on 2/10/2018

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