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Thin-layer black phosphorous/GaAs heterojunction p-n diodes

By Pascal Gehring, Roberto Urcuyo, Dinh Loc Duong, Marko Burghard and Klaus Kern


Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface. (C) 2015 AIP Publishing LLC

Publisher: 'AIP Publishing'
Year: 2015
DOI identifier: 10.1063/1.4922531
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