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Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

By M. Mosca, S. Nicolay, E. Feltin, J. F. Carlin, R. Butte, M. Ilegems, N. Grandjean, M. Tchernycheva, L. Nevou and F. H. Julien

Abstract

Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice-matched to GaN and no cracks appear in the structure. At very low indium concentration (similar to 2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium-free structures. Different mechanisms of strain relaxation in pure and 2% indium-doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 urn for AlN/GaN MQWs, and 3 mu n for AlInN/GaN MQWs with 15% of In are achieved. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Publisher: 'Wiley'
Year: 2010
DOI identifier: 10.1002/pssa.200622483
OAI identifier: oai:infoscience.tind.io:152871
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