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In-situ monitoring of GaN growth by hydride vapor phase epitaxy

By D. Martin, J. F. Carlin, V. Wagner, H. J. Buhlmann and M. Ilegems

Abstract

In-situ reflectivity measurements of the growth surface during deposition in a Hydride Vapor Phase Epitaxy system are presented. The GaN growth rate increases linearly with the HCl flow and increases monotonically with the ammonia flow. Following the replacement of the carrier gas nitrogen by hydrogen, the growth rate initially increases, passes through a maximum at a H-2 concentration of 0.15 and then decreases

Publisher: 'Wiley'
Year: 2010
DOI identifier: 10.1002/1521-396X(200212)194:2
OAI identifier: oai:infoscience.tind.io:152864
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