Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots


We have investigated the photoluminescence properties of GaN quantum dots with sub-micron lateral resolution by means of Near-Field Scanning Optical Microscopy (SNOM) operating in illumination mode. The analyzed sample consists of several stacked planes of GaN/AlN quantum dots grown by molecular beam epitaxy on Si(111) substrate. A clear correlation between the surface topography measured by Atomic Force Microscopy on uncapped samples and the SNOM luminescence maps has been found

Similar works

Full text


Infoscience - École polytechnique fédérale de Lausanne

Full text is not available
oai:infoscience.tind.io:152703Last time updated on 2/9/2018

Having an issue?

Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.