10.1002/1521-3951(200103)224:1

Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots

Abstract

We have investigated the photoluminescence properties of GaN quantum dots with sub-micron lateral resolution by means of Near-Field Scanning Optical Microscopy (SNOM) operating in illumination mode. The analyzed sample consists of several stacked planes of GaN/AlN quantum dots grown by molecular beam epitaxy on Si(111) substrate. A clear correlation between the surface topography measured by Atomic Force Microscopy on uncapped samples and the SNOM luminescence maps has been found

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Infoscience - École polytechnique fédérale de Lausanne

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oai:infoscience.tind.io:152703Last time updated on 2/9/2018

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