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Uniform and concentrated read disturb effects in mid-1X TLC NAND flash memories for enterprise solid state drives

By Cristian Zambelli, Piero Olivo, Luca Crippa, Alessia Marelli and Rino Micheloni

Abstract

The read disturb is one of the most important issues in TLC NAND Flash memories since their usage model is predominantly based on read-intensive applications. The state-of-the-art testing and qualification of the memories against this issue is performed by uniformly stressing the memory blocks with same amount of reads. However, by analyzing several workloads, it appears that the read operations are mostly concentrated in specific page regions. In this work, we characterize the different behavior of a mid-1X TLC NAND Flash under uniform and concentrated read disturb. The results are used to speculate the implications of the workload usage model on the reliability of enterprise Solid State Drives using different error correction strategies and data management policies

Publisher: IEEE
Year: 2017
DOI identifier: 10.1109/IRPS.2017.7936387
OAI identifier: oai:iris.unife.it:11392/2379006
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