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Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium

By D.Yu. Matveev

Abstract

The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium

Topics: thin films, bismuth, tellurium, mobility, size effect
Publisher: 'Sumy State University'
Year: 2016
DOI identifier: 10.21272/jnep.8(3).03012
OAI identifier: oai:essuir.sumdu.edu.ua:123456789/47285

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