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Defects of SiC nanowires studied by STM and STS

By Adam Busiakiewicz, A. Huczko, Tomasz Dudziak, M. Puchalski, W. Kozlowski, M. Cichomski, S. Cudzilo, Z. Klusek and W. Olejniczak


For the first time the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are employed to investigate the morphology and the surface electronic structure of the defective silicon carbide nanowires (SiCNWs). The SiCNWs produced via combustion synthesis route are studied. The STS measurements are performed in the current imaging tunneling spectroscopy mode (CITS) that allows us to determine the correlation between STM topography and the local density of electronic states (LDOS) around the bend of an isolated SiCNW. The measurements reveal fluctuations of LDOS in the vicinity of the defect. The local graphitisation and the inhomogeneous concentration of doping impurities (e.g. nitrogen, oxygen) are considered to explain these fluctuations of metallic-like LDOS in the vicinity of the SiCNW's deformation

Topics: Silicon carbide, Nanowire, Defect, STM, STS
Publisher: Elsevier Science B.V., Amsterdam.
Year: 2010
DOI identifier: 10.1016/j.apsusc.2010.01.102
OAI identifier:
Provided by: Cranfield CERES

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