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STRUCTURAL AND ELECTRICAL-PROPERTIES OF B-DELTA LAYERS IN SI

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Abstract

X-ray diffraction has been used to deduce the width and strain fields of an elemental boron delta layer in (100) Si grown by MBE. It is found to be < 1 nm thick and tetragonally distorted with a lattice contraction of 0.031 nm in the [100] direction. Hall measurements have been used to obtain the hole concentration in the layer and it is found that it is fully activated with a sheet carrier density of 3.5 x 10(14) cm-2, one of the highest values reported to date. Cross-sectional TEM analysis confirms that it is a near-ideal delta layer, with no precipitation evident

Topics: TK, TA, QC
Publisher: IOP PUBLISHING LTD
OAI identifier: oai:wrap.warwick.ac.uk:22811
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