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DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION

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Abstract

Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing

Topics: TK
Publisher: IEE-INST ELEC ENG
OAI identifier: oai:wrap.warwick.ac.uk:21349
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