We investigate the Quantum Hail Effect (QHE) in selectively boron-doped GeSi/(111)Ge multi-quantum well (MQW) samples of non standard geometry with six-point contacts disconnected from the sample edges. The Hail resistance shows a well-pronounced quantisation that is consistent with integral QHE (IQHE) value (h/ve(2)) at temperature T = 4.2K. When the temperature was lower than 2.5K, unusual peaks on the R(xy) plateaux were observed. We explain this behaviour by non-equilibrium population. of Landau levels that results from the separation of current contacts from the edge of the sample. (C) 1995 Academic Press Limite
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