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Two-dimensional hole gas in SiGe heterostructures: Electrical properties and field effect applications

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Abstract

Si-SiGe heterostructures offer realistic prospects for field effect transistors of enhanced performance and are being given serious consideration by the electronics industry. The author discusses our knowledge of the parameters influencing the mobility and drift velocity of holes in these materials which have already been demonstrated to exceed those in the silicon pMOS device

Topics: QD
Publisher: ELSEVIER SCIENCE BV
OAI identifier: oai:wrap.warwick.ac.uk:19159
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