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Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains

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Abstract

Silicon CMOS devices are subject to some limitations as the dimensions are scaled down for VLSI applications. The incorporation of SiGe into the p-channel device can reduce parasitic bipolar action and punchthrough susceptibility. The authors compare the properties of elevated source and drain devices with and without Si1-xGex in the source and drain regions. We show that the parasitic bipolar gain is reduced by a factor of 18 and that the punchthrough effects seen in silicon devices are absent in the Si0.8Ge0.2 devices

Topics: TK
Publisher: IEE-INST ELEC ENG
OAI identifier: oai:wrap.warwick.ac.uk:18821
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