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Coaxial impact collision ion scattering spectroscopy studies of Sb adsorption on the two-domain (100) surface of silicon



We present experimental and simulated coaxial impact collision ion scattering spectroscopy (CAICISS) data from the clean Si(100) surface and a Si(100)-(2 X 1)-Sb two-domain surface. The (2 X 1)-Sb surface was formed, following Sb deposition at 300 degrees C and annealing to 540 degrees C, and is shown to comprise of rows of symmetric Sb-dimers with an intra-dimer spacing of 2.7 +/- 0.1 Angstrom and a height above the silicon surface of 1.5 +/- 0.2 Angstrom. There is also evidence, from near critical edge scans, for the existence of dimer vacancies and single defects on this surface which give rise to additional coverage dependent intensity above polar angles > 165 degrees. The coverage dependence of the defect and dimer vacancy concentrations on the surface has been estimated and at Sb coverages > 2.0 monolayers the overlayer appears to be amorphous in nature

Topics: QC
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