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Energy loss rates of two dimensional hole gases in gated Si/Si0.8Ge0.2 heterostructures

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Abstract

Using high electric field Shubnikov de Haas oscillations (SdH) we have investigated the energy loss rate as a function of carrier temperature of hot holes in the ungated and gated inverted p type modulation doped Si/Si0.8Ge0.2 grown by solid source MBE at lattice temperature of 0.34K. At T-C=0.34 to 1.8K, it is seen that the energy loss rate in such a structure is more than that of a normal structure at the same sheet density, N-h. It is shown that the energy relaxation of the 2DHG is dominated by acoustic phonon scattering via deformation potential coupling

Topics: TA
Publisher: MINERALS, METALS & MATERIALS SOC
OAI identifier: oai:wrap.warwick.ac.uk:13898
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