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Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

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Abstract

In this work we report on the enhanced mobility and high electric field characteristics of SiGe p-channel MOSFETs. In the low electric field regime, the devices exhibit effective mobility three times greater than comparable standard Si devices. To determine accurate hole transport characteristics, an analytical modelling of these devices is implemented that takes into account the source drain resistance and short channel effects. (C) 2000 Elsevier Science B.V. All rights reserved

Topics: TK, T, QC
Publisher: ELSEVIER SCIENCE BV
OAI identifier: oai:wrap.warwick.ac.uk:13319
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