Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study depth profiles and lattice locations of Sb atoms in Si/Sb(delta-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solid solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the delta-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the original Sb delta-layer. Correspondences are found between defects in Si crystals and the depth profile and the lattice location of Sb atoms. The results show that medium-energy coaxial impact-collision ion scattering spectroscopy is useful for analyzing diffusion and defects in semiconductors
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