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On the mobility extraction for HMOSFETs

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Abstract

Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential. (C) 2001 Elsevier Science Ltd. All rights reserved

Topics: TK, QC
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
OAI identifier: oai:wrap.warwick.ac.uk:12196
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