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Interaction of trimethyl based metalorganic precursors on InSb(100)-c(8 x 2)

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Abstract

High resolution electron energy loss spectroscopy and X-ray photoelectron spectroscopy have been used to investigate the adsorption behaviour and thermal decomposition of trimethylaluminium, (Me3Al), trimethylindium (Me3In) and trimethylgallium (Me3Ga) on the InSb(1 0 0)-c(8 x 2) reconstructed surface. All three precursors follow the same basic decomposition route, involving the sequential loss of Me groups from the surface and the incorporation of the group III element via a dimethyl and monomethyl intermediate. In the case of Me3Al, however, an additional decomposition route has also been identified at elevated temperatures, involving the formation of a CH2 intermediate via H abstraction from a Me group. A mechanism is proposed that accounts for these observations, taking into account the most recent structural model of the InSb(1 0 0)-c(8 x 2) surface and the different carbon-metal bond strengths of each precursor. In the case of Me3Al, the additional high temperature decomposition route and formation of surface >CH2 species occurs via an Al-C-Sb heterobridge intermediate. The strong Al-C bond suppresses complete Me ligand desorption and offers the possibility of the alternative decomposition route. (C) 2002 Elsevier Science B.V. All rights reserved

Topics: QD, QC
Publisher: ELSEVIER SCIENCE BV
OAI identifier: oai:wrap.warwick.ac.uk:10576
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