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Antimony diffusion in silicon gemanium alloys under point defect injection

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Abstract

Antimony diffusion in in-situ doped strained Si0.9Ge0.1 epitaxial layers, subjected to point defects injection by rapid thermal anneal in oxygen atmosphere, was investigated as a function of temperature at range from 890degreesC to 1000degreesC. In this work, the effect of point defect injection on the diffusion of antimony in silicon and silicon-germanium alloys has confirmed the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy mediated. Diffusivities were obtained using computer simulations. Activation energies were calculated while the diffusivity of antinomy in SiGe under point defect injection as a function of temperature was presented

Topics: QC
Publisher: WORLD SCIENTIFIC PUBL CO PTE LTD
OAI identifier: oai:wrap.warwick.ac.uk:10228
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