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A W-band medium power amplifier in 90 nm CMOS

By Yu-Sian Jiang

Abstract

[[abstract]]A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (P sat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.

Topics: CMOS, microwave monolithic integrated circuit (MMIC), power ampli?er (PA), W-band., [[classification]]52
Publisher: IEEE Microwave Theory and Techniques Society
Year: 2013
OAI identifier: oai:ir.lib.ntnu.edu.tw:309250000Q/124825
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