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[[alternative]]Electrooptical Properties of InGaAs/GaAs Single Quantum Wells

By [[author]]羅時峰, [[author]]Shry-Fong Lou, 羅時峰 and Shry-Fong Lou

Abstract

[[abstract]]The electrooptical properties of (100) and (111)B InGaAs/GaAs single quantum wells (SQW) have been studied by photoreflectance (PR) spectroscopy at various temperetures and under different biases. The samples used in our experiments were grown by molecular-beam-epitaxy (MBE) on the (100) and (111)B GaAs substrates separately. There is a Si delta-doping layer of 5 *10^{12} cm^-2 at 1000A away from the SQW and 500A under the GaAs surface. The PR spectra features above the nergy gap of GaAs are the Franz-Keldish oscillations (FKOs), and features below the energy gap of GaAs are the excitonic interband transitions. Theoretical calculations have been performed to identify the origins of the various spectral features. By the analysis of the line shapes of the FKOs, we obtained the internal electric fields of the samples.

Topics: 量子井, 光調制反射光譜, 矽單層摻雜, Franz-Keldysh 振盪, quantum well, photoreflectance, Si delta doping, Franz-Keldysh oscillation, [[classification]]38
Year: 2010
OAI identifier: oai:ir.lib.ntnu.edu.tw:309250000Q/8083
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