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Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

By K. Alassaad, M. Vivona, V. Soulière, B. Doisneau, F. Cauwet, D. Chaussende, F. Giannazzo, F. Roccaforte and Gabriel Ferro

Abstract

International audienc

Topics: [SPI.MAT]Engineering Sciences [physics]/Materials, [CHIM.MATE]Chemical Sciences/Material chemistry
Publisher: 'The Electrochemical Society'
Year: 2014
DOI identifier: 10.1149/2.0121408jss
OAI identifier: oai:HAL:hal-01615319v1
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