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Interaction of Point Defects with Impurities in the Si-SiO2 System and Its Influence on the Properties of the Interface

By Daniel Kropman, E. Mellikov, K. Lott, T. Kärner, I. Heinmaa, Tony Laas, Artūrs Medvids, Wolfgang Skorupa, S. Prucnal, S. Zvyagin, E. Cizmar, M. Ozerov and J. Woznitsa

Abstract

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation

Topics: EPR, NMR, Point Defect, Si-SiO2 Interface
OAI identifier: oai:ortus.rtu.lv:6870
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