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Erratum: “Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator” [AIP Advances 1, 032167 (2011)]

By Ni Zhong, Hisashi Shima and Hiro Akinaga
Topics: Science, Q, Science (General), Q1-390, Physics, QC1-999
Publisher: AIP Publishing LLC
Year: 2011
DOI identifier: 10.1063/1.3660334
OAI identifier: oai:doaj.org/article:0b9afb0cca0b4a1a9681c76a5000b863
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